Implementing 5G Sliding IF Receivers In CMOS FDSOI Technology

<p dir="ltr">Complementary Metal Oxide Semiconductor (CMOS) technology has become an indispensable foundation in the rapid evolution of modern communication systems, especially in highly integrated, high-performance applications such as transceivers for 5^th generation (5G) wireless standard. Fully Depleted Silicon on Insulator (FDSOI) technology further highlights the excellence of CMOS technology for highly integrated systems, setting a new standard for high-performance receivers through impressive high-frequency performance, streamlined mask structure and back-end-of-line (BEOL) design, as well as flexible device stacking and dynamic back-gate bias control. Based on Global Foundries 22nm FDSOI process, a two-step conversion sliding IF receiver has been implemented. The receiver demonstrates excellent performance in the Ka-band (5G new radio (5GNR) band) with a noise figure of less than 4.5 dB and a gain of more than 35 dB, enabling synergy with an all-digital phase-locked loop (PLL) with phase control capability. This work provides a foundational single-element architecture for future large-scale, all-digital phased-array systems for 5G communications. However, scaling to dense arrays introduces challenges like electromagnetic coupling and injection locking among integrated PLLs, receivers, and antennas. Effective electromagnetic interference (EMI) shielding is essential to mitigate these issues and enable lightweight, compact packaging. This work addresses this need by characterizing MXene, a novel two-dimensional material, demonstrating its exceptional Ka-band shielding performance. Together, the FDSOI-based receiver and MXene shielding underscore their key roles in 5G and millimeter-wave applications, pointing toward more efficient, flexible, and reliable future communication systems.<br></p>