<p>Integrating piezoelectrics with the
standard complementary metal-oxide-semiconductor (CMOS) process presents new
opportunities for monolithic microelectromechanical systems (MEMS) with scaled
size, weight, and power (SWaP). Unlike traditional electrostatic transduction
in CMOS platform, piezoelectric actuation allows higher sensitivity and
electromechanical coupling, and as such, has been recently adopted by foundries
like TSMC and Globalfoundries in their standard CMOS lines for commercial MEMS
applications. In this research, a tunable ferroelectric capacitor (FeCAP)-based
unreleased RF MEMS resonator is presented, integrated seamlessly in Texas
Instruments’ 130nm ferroelectric random-access memory (RAM) process. To
achieve high-quality factor (<i>Q</i>) of
the resonator, acoustic waveguiding for vertical confinement within the CMOS
stack is studied and optimized. The FeCAP resonator is demonstrated with
fundamental resonance at 703 MHz and <i>Q</i>
of 1012. This gives a frequency-quality factor product
which is 1.6x higher than the most
state-of-the-art Pb(Zr, Ti)O<sub>3</sub> (PZT) resonators. Moreover,
ferroelectric poling parameters are investigated to demonstrate
bias-dependent pole/zero transitions accompanied by 180° phase shift in
multiple mechanical modes of the device. The resonator’s Butterworth-Van Dyke
(BVD) model is modified to capture this unique switching and frequency-hopping
mechanism. The designs are monolithically integrated into
solid-state CMOS technology, with no post-processing or release etch step which
is typical of other MEMS devices. These novel
switchable resonators may have promising applications in on-chip timing, ad-hoc
radio front ends, and chip-scale sensors. </p>
<p>In order to best leverage these new
CMOS-MEMS resonators for RF signal processing, synchronized clock arrays, and
on-chip sensors requiring a network of such resonators working together, we
require the ability to route and manipulate mechanical signals within the CMOS
stack. At high frequencies of operation, it is particularly important to
minimize propagation losses and control the dispersion of elastic waves.
Therefore, this research also proposes the design of new acoustic metamaterials
in order to localize, guide, and split elastic waves with low dispersion. These
designs will be prototyped in an AlN piezoelectric platform for the proof of
concept but can translate with small modifications to direct CMOS
implementation.</p>